Elettronica
AlixLabs AB announce that the company will be granted their first European patent relating to Atomic Layer Etch Pitch Splitting (APS) for semiconductor manufacturing
In a statement from Dr. Dmitry Suyatin, CTO and Co-founder of AlixLabs on the origin of the invention and R&D activities in Lund , he said, "Our key technology is based on a surprising discovery that sidewalls act as a topographical mask in Atomic Layer Etch Processes. This technology has been proven for such different materials as Gallium Phosphide (GaP), Silicon (Si) and Tantalum Nitride (TaN) – all being critical materials to the semiconductor and optoelectronic industry. Besides already having secured a granted two US and one Taiwan patent, we are now delighted to announce that our European patent will also be granted and that we have more patent applications in the pipeline. A process of validating the patent in key countries in Europe is in process."
Dr. Jonas Sundqvist , CEO and Co-founder said, "The APS method is complementary for single exposure Immersion and Extreme UV (EUV) Lithography and corresponding multiple patterning technologies like self-aligned double and quadruple patterning (SADP resp. SAQP) as well as multiple exposure lithography-etch and directed self-assembly (DSA). However, APS can reduce complexity, capital expenditure and the environmental foot print for wafer manufacturing considerably. Besides that EU is one of the biggest markets for semiconductor components, the recent announcements of 300 mm wafer fab expansions and leading automotive sector means that it is more important than ever to have European IP".
Jonas Sundqvist , CEO of AlixLabs, phone +46 767 63 94 67, email jonas@alixlabs.com
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