Comunicati Stampa
Elettronica

E&R: Leading SiC Process Integration Advance Solutions for Process Yield Enhancement

E&R collaborates with global industry leaders and suppliers, offering key SiC integration solutions: E&R collaborates with global industry leaders and suppliers, offering key SiC integration solutions: Laser Annealing : E&R deploys ultra-short wavelength lasers with their self-developed accelerated optics solution (ACES) for precise and uniform shallow annealing. Wafer ID Marking : With over 30 years of laser expertise, E&R employs a 355nm UV laser, designed for SiC, meeting...
London, (informazione.it - comunicati stampa - elettronica)

E&R collaborates with global industry leaders and suppliers, offering key SiC integration solutions:

: E&R deploys ultra-short wavelength lasers with their self-developed accelerated optics solution (ACES) for precise and uniform shallow annealing.

: With over 30 years of laser expertise, E&R employs a 355nm UV laser, designed for SiC, meeting precision and throughput demands. It works for 6-inch, 8-inch, and 12-inch wafers, both topside and backside.

E&R uses industry-leading Pico second and Femto second laser technologies for cutting and grooving, achieving a minimum cut width of 3um. Combined with mechanical breaking technology, their machines achieve an accuracy of ±1um, and successfully reduce wafer chipping and cracking while minimizing the heat-affected zone (HAZ) with recast thickness below 2um.

In collaboration with world-leading wafer foundries, E&R introduces Raman spectroscopy technology. By illuminating wafers with laser light on their surface or within, they induce Raman scattering, allowing effective waveform analysis to obtain fundamental information about wafers like internal stress, lattice structure, cracks, and element concentrations. This technology enables customers to comprehensively assess and adjust process parameters, reducing losses due to various defects, ultimately improving process yield.

E&R provides various plasma treatment technologies, including LF, RF, and microwave plasma sources. These ensure a highly uniform cleaning process for wafers before wire bonding and molding, resulting in high surface hydrophilicity and a water contact angle of less than 10 degrees. Additionally, E&R proposes a plasma decarbonization solution to reduce carbon layers, thereby strengthening the subsequent backside metallization process.

E&R will continue to collaborate with customers and explore possibilities to achieve more efficient manufacturing processes, contributing to the future development of the semiconductor industry.

During Nov.14 -17 , E&R will exhibit in Semicon Europa at Messe München. Please stop by Booth# B2378 to have fruitful discussion with E&R.

E&R Website: https://en.enr.com.tw/ 

Media Contact:kevincy_chang@enr.com.tw

Photo - https://mma.prnewswire.com/media/2265712/SiC.jpg

View original content:https://www.prnewswire.co.uk/news-releases/er-leading-sic-process-integration-advance-solutions-for-process-yield-enhancement-301977010.html

Ufficio Stampa
 PR Newswire (Leggi tutti i comunicati)
209 - 215 Blackfriars Road
LONDON United Kingdom
Allegati
Non disponibili