SiC Power Semiconductor Market to Experience Substantial CAGR Growth of 26.0% by 2030, Size, Share, Trends, Industry Growth, Key Drivers and Opportunity Analysis

Data Bridge Market Research analyses that the global SiC power semiconductor market is expected to reach a value of USD 7,030,515.23 thousand by 2030, at a CAGR of 26.0% during the forecast period. The global SiC power semiconductor market report also comprehensively covers pricing analysis, patent analysis, and technological advancements.    

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Market Definition

SiC power semiconductor refers to the type of semiconductor that contains carbon and silicon and operates at very high voltage and temperature. SiC power semiconductors can be used in producing a strong as well as a very hard material. SiC power semiconductors can be implemented in various sectors such as telecommunication, energy and power, automotive, renewable power generation, and in different other areas. They are basically considered due to higher maximum thermal conductive properties that have widened the area of application. SiC power semiconductors are devices that are considered high-frequency power devices that are majorly applicable in wireless communications. SiC semiconductor offers ten times the dielectric breakdown field strength, three times the thermal conductivity, and three times the bandgap as compared to a silicon semiconductor. The SiC semiconductor has taken over the market because of its high performance and efficiency. The SiC power semiconductor offers to work at high voltage and current and offers low on-resistance in addition to being efficient at high temperatures. The combination of silicon carbide has thus proved to be a better and optimum choice of semiconductor.

Market Drivers

There are very useful properties of SiC as a semiconductor material. In applications such as inverters, motor drives, and battery chargers, silicon carbide (SiC) devices offer many advantages, such as improved power density, reduced cooling requirements, and reduced overall system cost. These advantages are enough to make SiC power semiconductors at the high efficient stage.

The energy lost by SiC during the reverse recovery phase is only 1% of the energy lost by silicon which creates a huge difference in the efficiency of the material. The virtual absence of a tail current allows a faster turn–off, and it makes lower losses. Since there is less energy to dissipate, a SiC device able to switch at higher frequencies and improve efficiency. The more efficient, small size, and lower weight of SiC as compared to other materials can create a higher-rated solution or a smaller design with reduced cooling requirements. Thus, the advent of SiC power semiconductors is a major factor expected to drive the growth of the Global SiC power semiconductor market.

The world is changing so fast, and it is turning towards renewable energy. All sectors, market players, and government institutes are making more focus to build electric vehicle infrastructure and generate more demand for electric vehicles.

As per the information from International Energy Agency (IEA), 16.5 million electric cars were on the road in 2021, a tripling in just three years, and this is a big number as compared to 2020. Electric car sales increased and doubled in China, continued to increase in Europe, and picked up in the U.S.  in 2021. This data shows that there is a tremendous increase in the penetration of EVs in the market, which may positively affect the environment as well as the Global SiC power semiconductor market. SiC is highly efficient at high voltages, enabling fast battery charging times that are comparable to filling the tank of conventional vehicles. Silicon carbide power electronics are enabling a surge in 800-volt drive systems, paving the way for lighter EVs with greater range.

Some of the major players operating in the SiC Power Semiconductor market are:

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Recent Developments

The report provides insights on the following pointers:

Market Penetration: Comprehensive information on the product portfolios of the top players in the SiC Power Semiconductor market

Product Development/Innovation: Detailed insights on upcoming technologies, R&D activities, and product launches in the market

Competitive Assessment: In-depth assessment of the market strategies, and geographic and business segments of the leading players in the market

Market Development: Comprehensive information about emerging markets. This report analyzes the market for various segments across geographies

Market Diversification: Exhaustive information about new products, untapped geographies, recent developments, and investments in the SiC Power Semiconductor Market

Key Industry Segmentation: SiC Power Semiconductor Market

By Type

By Voltage Range

By Wafer Size

By Wafer Type

By Application

By Vertical

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A comprehensive analysis will be provided covering the following points in the report:

Regional Analysis/Insights: SiC Power Semiconductor Market

The countries covered in the SiC power semiconductor market report are U.S., Canada, Mexico, Germany, U.K., Italy, France, Spain, Switzerland, Netherlands, Belgium, Russia, Turkey, Poland, Sweden, Denmark,  Rest of Europe, Japan, China, South Korea, India, Australia and New Zealand, Hong Kong, Taiwan, Singapore, Thailand, Indonesia, Malaysia, Philippines, Vietnam, and Rest of Asia-Pacific, South Africa, UAE., Israel, Egypt, Qatar, Saudi Arabia, Kuwait, Rest of the Middle East and Africa, Brazil, Argentina, and Rest of South America.

In 2023, the Asia-Pacific region is expected to dominate the global SiC power semiconductor market due to the high demand for SiC power semiconductors. Additionally, the high demand for power modules and related devices is expected to act as a driving factor for the market's growth.  

Table of Contents:

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GaN and SiC Power Semiconductor Market, By Product (Sic Power Module, GaN Power Module, Discrete SiC, Dicrete GaN), Application (Power Supplies, Industrial Motor Drives, H/EV, PV Inverters, Traction, Others), Country (U.S., Canada, Mexico, Brazil, Argentina, Rest of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific, Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa) https://www.databridgemarketresearch.com/reports/global-gan-and-sic-power-semiconductor-market

Asia-Pacific SiC Power Semiconductor Market, By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others) https://www.databridgemarketresearch.com/reports/asia-pacific-sic-power-semiconductor-market

Europe SiC Power Semiconductor Market, By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others) https://www.databridgemarketresearch.com/reports/europe-sic-power-semiconductor-market

Middle East and Africa SiC Power Semiconductor Market, By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others) https://www.databridgemarketresearch.com/reports/middle-east-and-africa-sic-power-semiconductor-market

North America SiC Power Semiconductor Market, By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others) https://www.databridgemarketresearch.com/reports/north-america-sic-power-semiconductor-market

Pin Fin Heat Sink for Integrated Gate Bipolar Transistor (IGBT) Market, By Material Type (Copper, Aluminium), Application (Consumer Electronics, Automotive Field, Others), Country (U.S., Canada, Mexico, Brazil, Argentina, Rest of South America, Germany, France, Italy, U.K., Belgium, Spain, Russia, Turkey, Netherlands, Switzerland, Rest of Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific, U.A.E, Saudi Arabia, Egypt, South Africa, Israel, Rest of Middle East and Africa) https://www.databridgemarketresearch.com/reports/global-pin-fin-heat-sink-for-igbt-market

Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market, By Type (Discrete IGBT, Modular IGBT), Power Rating (High- Power, Medium- Power, Low- Power), End- User (Automotive, Consumer Electronics, Communication, Industrial, Other End-Use Verticals) https://www.databridgemarketresearch.com/reports/global-igbt-discrete-semiconductor-market

Insulated Gate Bipolar Transistor (IGBT) Market, By Type (Discrete, Modular), Power Rating (High-Power, Medium-Power, Low-Power), End-user Industry (EV/HEV, Renewables, UPS, Rail, Motor Drives, Industrial, Commercial), Country (U.S., Canada, Mexico, Brazil, Argentina, Rest of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific, Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa) https://www.databridgemarketresearch.com/reports/global-insulated-gate-bipolar-transistor-igbt-market

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