Elettronica
AlixLabs AB demonstrates pitch splitting in bulk silicon for leading edge semiconductor manufacturing
The method is covered by core IP in the USA , Taiwan , and Europe . Dr. Dmitry Suyatin, CTO and co-founder of AlixLabs, stated,, "In APS, the sidewalls of nanoscale features act as a topological mask in combination with Atomic Layer Etch Processes and can be used to initiate splitting of the nanostructures. Previously we have verified the process for nanowires for such different materials as gallium phosphide (GaP) and Silicon (Si), and now we have the evidence also for bulk silicon, by creating features with sizes below 10 nm."
Dr. Jonas Sundqvist , CEO and co-founder, said, "The APS method is complementary for single exposure Immersion and Extreme UV (EUV) Lithography and corresponding multiple patterning technologies like self-aligned double and quadruple patterning (SADP resp. SAQP) as well as multiple exposure lithography-etch and directed self-assembly (DSA). However, APS can considerably reduce the complexity, capital expenditure, and environmental footprint of wafer manufacturing. Demonstrating pitch splitting in bulk silicon by creating sub-10 nm structures has been a major milestone for AlixLabs. We will continue the introduction of this breakthrough technology into wafer-scale semiconductor manufacturing and have already started the process transfer to a 300 mm Pilot-fab."
Jonas Sundqvist , CEO of AlixLabs, phone +46 767 63 94 67, email jonas@alixlabs.com.
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