Elettronica
AlixLabs AB today announced that the company has been granted a second patent in the USA relating to Atomic Layer Etch Pitch Splitting (APS) for semiconductor manufacturing
In a statement from Dr. Dmitry Suyatin, CTO and co-founder of AlixLabs on the origin of the invention and R&D activities in Lund , he said, "Our key technology is based on a surprising discovery that sidewalls act as a topographical mask in Atomic Layer Etch Processes. This technology has been proven for such different materials as Gallium Phosphide (GaP), Silicon (Si) and Tantalum Nitride (TaN) – all being critical materials to the semiconductor and optoelectronic industry. Besides already having secured a granted the first US and Taiwan patent, we are now delighted to announce that our second US patent has also been granted and that we have more patent applications in the pipeline."
Dr. Amin Karimi , R&D and Operation Manager, added, "I am delighted to add that ALixLabs has been finalized a 1 Million SEK Vinnova funded project to verify the APS technology in the fabrication and electrical characterization of nanowire test transistor architecturesthis summer". Dr. Jonas Sundqvist , CEO and co-founder of AlixLabs, concluded that "The strategy as we advance is to successfully transfer the APS technology to 300 mm wafer processing and making it readily available for process demonstration for the leading IDMs & Foundries. We don't only hope to cut cost in semiconductor manufacturing but also to reduce the energy and clean water demand and output of greenhouse gasses during chip manufacturing considerably. This is not by itself a Green Fab Technology. However, it takes one small step in the right direction."
Jonas Sundqvist , CEO of AlixLabs, phone +46 767 63 94 67, email jonas@alixlabs.com.
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